Medium energy ion scattering investigation of homoepitaxy on H terminated Si(111)COPEL, M; TROMP, R. M.Surface science. 1995, Vol 337, Num 1-2, pp L773-L776, issn 0039-6028Article

Selective epitaxial growth of silicon by the A.C. technique. I: Nonimplanted substrate/oxide surfacesWANG, Q. S; REISMAN, A; TEMPLE, D et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 7, pp 2438-2449, issn 0013-4651Article

Regenerative homoepitaxy of diamondWOO, J. T.Journal of fusion energy. 1993, Vol 12, Num 4, pp 371-373, issn 0164-0313Conference Paper

Analytical model for epitaxial silicon growth rate and alloying level determination in clorides and hydride processesPROKOJEV, E. P.Fizika i himiâ obrabotki materialov. 1996, Num 1, pp 76-87, issn 0015-3214Article

Single-source MOVPE growth of zinc sulfide thin films using zinc dithiocarbamate complexesNOMURA, R; MURAI, T; TOYOSAKI, T et al.Thin solid films. 1995, Vol 271, Num 1-2, pp 4-7, issn 0040-6090Article

Atomic layer epitaxy of germaniumSUGAHARA, S; KITAMURA, T; IMAI, S et al.Applied surface science. 1994, Vol 82-83, Num 1-4, pp 380-386, issn 0169-4332Conference Paper

Initial stage of aluminum thin film growth on Si(100) surfaces as observed by scanning tunneling microscopyCHANGXIN ZHU; MISAWA, S; TSUKAHARA, S et al.Surface science. 1995, Vol 325, Num 3, pp 279-284, issn 0039-6028Article

Selective epitaxial growth of silicon by the A.C. technique. II: Ion-implanted substrate/oxide surfacesWANG, Q. S; REISMAN, A; TEMPLE, D et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 7, pp 2450-2455, issn 0013-4651Article

Epitaxial growth of GaN on Si(100)/sapphire (0001) using RF plasma-assisted ionized source beam epitaxyYOO, M. C; KIM, T. I; KIM, K et al.Optical and quantum electronics. 1995, Vol 27, Num 5, pp 427-434, issn 0306-8919Article

Recent advances in atomic layer epitaxy devicesBEDAIR, S. M; EL-MASRY, N. A.Applied surface science. 1994, Vol 82-83, Num 1-4, pp 7-13, issn 0169-4332Conference Paper

Growth and characterisation of InP by close vapor transportMIMILA-ARROYO, J; DIAZ, J; LUSSON, A et al.Materials science and technology. 1996, Vol 12, Num 2, pp 178-180, issn 0267-0836Conference Paper

Misfit-related effects in the epitaxial growth of iron on W(110)BEHTGE, H; HEUER, D; JENSEN, C et al.Surface science. 1995, Vol 331-333, pp 878-884, issn 0039-6028, bConference Paper

Atomic-layer epitaxy control of Ge and Si in flash-heating CVD using GeH₄ and SiH₄ gasesSAKURABA, M; MUROTA, J; WATANABE, T et al.Applied surface science. 1994, Vol 82-83, Num 1-4, pp 354-358, issn 0169-4332Conference Paper

Mechanisms of SiC growth by alternate supply of SiH₂Cl₂ and C₂H₂NAGASAWA, H; YAMAGUCHI, Y.-I.Applied surface science. 1994, Vol 82-83, Num 1-4, pp 405-409, issn 0169-4332Conference Paper

Growth of ultrathin Pd films on Al(001) surfacesSHUTTHANANDAN, V; SALEH, A. A; SHIVAPARAN, N. R et al.Surface science. 1996, Vol 350, Num 1-3, pp 11-20, issn 0039-6028Article

Surface structures and growth model of the Cu/Si(100)2×1 surface depending on heat treatmentIKEDA, T; KAWASHIMA, Y; ITOH, H et al.Surface science. 1995, Vol 336, Num 1-2, pp 76-84, issn 0039-6028Article

Atomic layer epitaxy in the growth of complex thin film structures for electroluminescent applicationsNIINISTÖ, L; LESKELÄ, M.Applied surface science. 1994, Vol 82-83, Num 1-4, pp 454-459, issn 0169-4332Conference Paper

Self-limiting adsorption of thermally cracked SiCl₂H₂ on Si surfacesSASAOKA, C; USUI, A.Applied surface science. 1994, Vol 82-83, Num 1-4, pp 348-353, issn 0169-4332Conference Paper

Si ALE using chlorine/hydrogen exchange. Fundamentals and filmsKOLESKE, D. D; GATES, S. M.Applied surface science. 1994, Vol 82-83, Num 1-4, pp 344-347, issn 0169-4332Conference Paper

Substitution of surface-adsorbed As atoms to P atoms in atomic layer epitaxyIKEDA, H; MIURA, Y; TAKAHASHI, N et al.Applied surface science. 1994, Vol 82-83, Num 1-4, pp 257-262, issn 0169-4332Conference Paper

Crystallography and morphology of the early stages of the growth of Co/Cu(111) by LEED and STMDE LA FIGUERA, J; PRIETO, J. E; KOSTKA, G et al.Surface science. 1996, Vol 349, Num 1, pp L139-L145, issn 0039-6028Article

Epitaxy and thermal behaviour of metastable metal filmsDETZEL, T.Progress in surface science. 1995, Vol 48, Num 1-4, pp 275-286, issn 0079-6816Conference Paper

On the influence of adsorbates on heteroepitaxy: work function oscillations during deposition of copper on platinum(111)NOHLEN, M; SCHMIDT, M; WANDELT, K et al.Surface science. 1995, Vol 331-333, pp 902-907, issn 0039-6028, bConference Paper

REM studies of Ge growth on Au-adsorbed Si(001) surfacesMINODA, H; TANISHIRO, Y; YAMAMOTO, N et al.Surface science. 1995, Vol 331-333, pp 913-919, issn 0039-6028, bConference Paper

New structure by selective regrowth in multi-quantum well laser diodes performed by low pressure metalorganic vapor phase epitaxyOTSUKA, N; KITO, M; MORI, Y et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 866-874, issn 0022-0248Conference Paper